CM100TXP-24T
Mitsubishi Electric
Description: Insulated Gate Bipolar Transistor,

Overview of CM100TXP-24T by Mitsubishi Electric

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  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for CM100TXP-24T by Mitsubishi Electric

Part # Manufacturer Description Stock Price Buy
DISTI # CM100TXP-24T
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Not Compliant Min Qty: 1 0
RFQ

CAD Models for CM100TXP-24T by Mitsubishi Electric
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Part Data Attributes for CM100TXP-24T by Mitsubishi Electric

CM100TXP-24T
Mitsubishi Electric
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
100 A
Collector-Emitter Voltage-Max
1200 V
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Fall Time-Max (tf)
500 ns
Gate-Emitter Thr Voltage-Max
6.6 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-PUFM-X35
Number of Elements
6
Number of Terminals
35
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
565 W
Reference Standard
UL RECOGNIZED
Rise Time-Max (tr)
200 ns
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
1000 ns
Turn-on Time-Max (ton)
600 ns
VCEsat-Max
1.95 V
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