Part Details for CM100DU-12H by Mitsubishi Electric
Overview of CM100DU-12H by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for CM100DU-12H
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48F4208
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Newark | Igbt, Module, 600V, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:600V, Power Dissipation:400W, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM100DU-12H RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM100DU-12H
CM100DU-12H CAD Models
CM100DU-12H Part Data Attributes
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CM100DU-12H
Mitsubishi Electric
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Datasheet
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CM100DU-12H
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 400 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 500 ns | |
Turn-on Time-Nom (ton) | 350 ns | |
VCEsat-Max | 3 V |