Datasheets
CM100BU-12H by:

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,

Part Details for CM100BU-12H by Mitsubishi Electric

Overview of CM100BU-12H by Mitsubishi Electric

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Price & Stock for CM100BU-12H

Part # Distributor Description Stock Price Buy
DISTI # 09B2199
Newark Igbt, Module, 600V, 100A, Continuous Collector Current:100A, Collector Emitter Saturation Voltage:600V, Power Dissipation:400W, Operating Temperature Max:150°C, Igbt Termination:Stud, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM100BU-12H Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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Part Details for CM100BU-12H

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CM100BU-12H Part Data Attributes:

CM100BU-12H Mitsubishi Electric
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CM100BU-12H Mitsubishi Electric Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel,
Pbfree Code No
Rohs Code No
Part Life Cycle Code Not Recommended
Ihs Manufacturer MITSUBISHI ELECTRIC CORP
Package Description FLANGE MOUNT, R-XUFM-X12
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-Emitter Voltage-Max 600 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X12
Number of Elements 4
Number of Terminals 12
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
VCEsat-Max 3 V

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