Part Details for CLX32-05P by Infineon Technologies AG
Overview of CLX32-05P by Infineon Technologies AG
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Part Details for CLX32-05P
CLX32-05P CAD Models
CLX32-05P Part Data Attributes
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CLX32-05P
Infineon Technologies AG
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CLX32-05P
Infineon Technologies AG
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MWP-25, 3 PIN
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 11 V | |
| Drain Current-Max (ID) | 1.4 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 5.4 W | |
| Power Gain-Min (Gp) | 15.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |