Part Details for CJD122 by Central Semiconductor Corp
Overview of CJD122 by Central Semiconductor Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CJD122
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-236AB | 1449 |
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$0.5280 / $1.4400 | Buy Now |
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Quest Components | Bipolar Junction Transistor, Darlington, NPN Type, TO-236AB | 134 |
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$0.5250 / $1.7500 | Buy Now |
Part Details for CJD122
CJD122 CAD Models
CJD122 Part Data Attributes
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CJD122
Central Semiconductor Corp
Buy Now
Datasheet
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CJD122
Central Semiconductor Corp
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CENTRAL SEMICONDUCTOR CORP | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | DARLINGTON | |
DC Current Gain-Min (hFE) | 100 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 20 W | |
Power Dissipation-Max (Abs) | 20 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz | |
VCEsat-Max | 4 V |
Alternate Parts for CJD122
This table gives cross-reference parts and alternative options found for CJD122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CJD122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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KSH122-TF | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin | Samsung Semiconductor | CJD122 vs KSH122-TF |
KSH122TM | NPN Silicon Darlington Transistor, DPAK-3, 2500-REEL | onsemi | CJD122 vs KSH122TM |
MJD122TF | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | CJD122 vs MJD122TF |
CJD122BK | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | CJD122 vs CJD122BK |
MJD122T4 | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | CJD122 vs MJD122T4 |
MJD122G | 8.0 A, 100 V NPN Darlington Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | CJD122 vs MJD122G |
MJD122T4 | Low voltage NPN power Darlington transistor | STMicroelectronics | CJD122 vs MJD122T4 |
CJD122TR13 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, | Central Semiconductor Corp | CJD122 vs CJD122TR13 |
KSH122TF_NL | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | CJD122 vs KSH122TF_NL |
MJD122-T1 | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Samsung Semiconductor | CJD122 vs MJD122-T1 |