Datasheets
CGHV40030P by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET,

Part Details for CGHV40030P by Wolfspeed

Overview of CGHV40030P by Wolfspeed

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Applications Consumer Electronics

Part Details for CGHV40030P

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CGHV40030P Part Data Attributes

CGHV40030P Wolfspeed
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CGHV40030P Wolfspeed RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer WOLFSPEED INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Wolfspeed
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 4.2 A
FET Technology HIGH ELECTRON MOBILITY
Feedback Cap-Max (Crss) 0.15 pF
Highest Frequency Band C BAND
JESD-30 Code R-CDFP-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLATPACK
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 15 dB
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM NITRIDE

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