Part Details for CGH35060F-TB by Cree, Inc.
Overview of CGH35060F-TB by Cree, Inc.
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Applications
Consumer Electronics
Part Details for CGH35060F-TB
CGH35060F-TB CAD Models
CGH35060F-TB Part Data Attributes:
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CGH35060F-TB
Cree, Inc.
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Datasheet
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CGH35060F-TB
Cree, Inc.
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CREE INC | |
| Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 120 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |