We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / RF Power Field-Effect Transistors / CGH35030F
Datasheets
CGH35030F by:
Cree, Inc.
Cree, Inc.
MACOM
Wolfspeed
Not Found

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for CGH35030F by Cree, Inc.

Results Overview of CGH35030F by Cree, Inc.

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics

CGH35030F Information

CGH35030F by Cree, Inc. is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for CGH35030F

CGH35030F CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

CGH35030F Part Data Attributes

Parametric Data
CGH35030F Cree, Inc.
Buy Now Datasheet
Compare Parts:
CGH35030F Cree, Inc. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer CREE INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 84 V
Drain Current-Max (ID) 3 A
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F2
JESD-609 Code e4
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Gold (Au) - with Nickel (Ni) barrier
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM NITRIDE

Alternate Parts for CGH35030F

This table gives cross-reference parts and alternative options found for CGH35030F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CGH35030F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
CGH35030F Wolfspeed Check for Price RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, CGH35030F vs CGH35030F

CGH35030F Related Parts

CGH35030F Frequently Asked Questions (FAQ)

  • Wolfspeed recommends a 4-layer PCB with a thermal via array under the device to dissipate heat. A thermal pad on the bottom of the device should be connected to a large copper area on the PCB to improve heat sinking. Additionally, a low-thermal-resistance interface material (e.g., thermal tape or thermal grease) should be used between the device and the heat sink.

  • To ensure reliable operation at high frequencies, it's essential to follow Wolfspeed's recommended PCB layout and assembly guidelines. This includes using a low-loss PCB material, minimizing trace lengths and vias, and using a high-quality, low-ESR decoupling capacitor. Additionally, the device should be operated within its recommended operating conditions, and the input and output matching networks should be optimized for the specific frequency of operation.

  • The maximum safe operating temperature for the CGH35030F is 150°C. However, Wolfspeed recommends operating the device at a junction temperature (Tj) below 125°C to ensure optimal performance and reliability. The device should be derated for operation above 125°C, and the maximum power dissipation should be reduced accordingly.

  • To prevent ESD damage, Wolfspeed recommends handling the CGH35030F in an ESD-controlled environment, using ESD-protective packaging and materials, and grounding oneself before handling the device. Additionally, the device should be assembled using ESD-safe tools and techniques, and the PCB should be designed with ESD protection in mind (e.g., using ESD-protection diodes or resistors).

  • Wolfspeed recommends storing the CGH35030F in its original packaging, in a dry, cool place, away from direct sunlight and moisture. The device should be handled in an ESD-controlled environment, and it should not be exposed to temperatures above 150°C or below -40°C. The device should also be protected from mechanical stress, vibration, and shock during storage and handling.