Part Details for CGH25120F by Cree, Inc.
Overview of CGH25120F by Cree, Inc.
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Applications
Telecommunications
Part Details for CGH25120F
CGH25120F CAD Models
CGH25120F Part Data Attributes
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CGH25120F
Cree, Inc.
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Datasheet
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CGH25120F
Cree, Inc.
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | CREE INC | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 120 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | S BAND | |
JESD-30 Code | S-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |