Datasheets
CFY30 by:

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET,

Part Details for CFY30 by Infineon Technologies AG

Overview of CFY30 by Infineon Technologies AG

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Applications Education and Research Security and Surveillance Audio and Video Systems

Part Details for CFY30

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CFY30 Part Data Attributes:

CFY30 Infineon Technologies AG
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CFY30 Infineon Technologies AG RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET,
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 5 V
Drain Current-Max (ID) 0.08 A
FET Technology JUNCTION
Highest Frequency Band X BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.25 W
Power Gain-Min (Gp) 10 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for CFY30

This table gives cross-reference parts and alternative options found for CFY30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFY30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET Siemens CFY30 vs CFY30
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, Qorvo CFY30 vs CFY30
CFY30 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET TriQuint Semiconductor CFY30 vs CFY30
Part Number Description Manufacturer Compare
NE76118-M RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd CFY30 vs NE76118-M
NE76118-T2K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd CFY30 vs NE76118-T2K
NE722S01-A RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, S01, 4 PIN NEC Electronics Group CFY30 vs NE722S01-A
CFH77 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MW-4, 4 PIN Infineon Technologies AG CFY30 vs CFH77
CFH800 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET, Infineon Technologies AG CFY30 vs CFH800
NE434S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, S01, 4 PIN NEC Electronics America Inc CFY30 vs NE434S01-T1
NE72218-59 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 NEC Compound Semiconductor Devices Ltd CFY30 vs NE72218-59
FHX35LG RF Small Signal Field-Effect Transistor, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 FUJITSU Semiconductor Limited CFY30 vs FHX35LG
NE76118-K RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SUPER MINIMOLD PACKAGE-4 NEC Electronics Group CFY30 vs NE76118-K
NE425S01-T1 RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, NEC Compound Semiconductor Devices Ltd CFY30 vs NE425S01-T1

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