Datasheets
CF739 by:

RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Part Details for CF739 by Siemens

Overview of CF739 by Siemens

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Energy and Power Systems Agriculture Technology Medical Imaging Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming Robotics and Drones

Part Details for CF739

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CF739 Part Data Attributes:

CF739 Siemens
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CF739 Siemens RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 10 V
Drain Current-Max (ID) 0.08 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.24 W
Power Gain-Min (Gp) 17 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for CF739

This table gives cross-reference parts and alternative options found for CF739. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CF739, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CF739 RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, Infineon Technologies AG CF739 vs CF739
CF739 RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET TriQuint Semiconductor CF739 vs CF739
Part Number Description Manufacturer Compare
NE25139T2U71 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) CF739 vs NE25139T2U71
NE25139U73 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN California Eastern Laboratories (CEL) CF739 vs NE25139U73
NE25118-T1 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) CF739 vs NE25118-T1
3SK299 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 NEC Electronics Group CF739 vs 3SK299
3SK299-U71 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 NEC Electronics America Inc CF739 vs 3SK299-U71
3SK299-U72 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 NEC Electronics Group CF739 vs 3SK299-U72
NE25139U74 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN California Eastern Laboratories (CEL) CF739 vs NE25139U74
NE25339-T1 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) CF739 vs NE25339-T1
NE25139T1U72 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET California Eastern Laboratories (CEL) CF739 vs NE25139T1U72
NE25118 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, NEC Electronics America Inc CF739 vs NE25118

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