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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
21AH3192
|
Newark | Mosfet Module, Dual N-Ch, 1.2Kv, 450A, Mosfet Module Configuration:Half Bridge, Channel Type:N Channel, Continuous Drain Current Id:450A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:-, Rds(On) Test Voltage:15V, Power Dissipation:- Rohs Compliant: Yes |Wolfspeed CAB450M12XM3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3 |
|
$978.6400 / $1,010.0600 | Buy Now |
DISTI #
1697-CAB450M12XM3-ND
|
DigiKey | SIC 2N-CH 1200V 450A MODULE Min Qty: 1 Lead time: 30 Weeks Container: Box |
301 In Stock |
|
$827.2640 / $857.1600 | Buy Now |
DISTI #
941-CAB450M12XM3
|
Mouser Electronics | Discrete Semiconductor Modules SiC HalfBridgeModule 1.2kV 450A RoHS: Not Compliant | 75 |
|
$857.0700 | Buy Now |
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|
CAB450M12XM3
Wolfspeed
Buy Now
Datasheet
|
Compare Parts:
CAB450M12XM3
Wolfspeed
Power Field-Effect Transistor,
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | ISOLATED | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 450 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JESD-30 Code | R-PUFM-X11 | |
Number of Elements | 2 | |
Number of Terminals | 11 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Reference Standard | IEC-60747-8-4 | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |