Part Details for C3M0120090D by Cree, Inc.
Overview of C3M0120090D by Cree, Inc.
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Applications
Space Technology
Internet of Things (IoT)
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Communication and Networking
Robotics and Drones
Part Details for C3M0120090D
C3M0120090D CAD Models
C3M0120090D Part Data Attributes
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C3M0120090D
Cree, Inc.
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Datasheet
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C3M0120090D
Cree, Inc.
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | CREE INC | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-04-19 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 97 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Reference Standard | IEC-60747-8-4 | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |