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Power Field-Effect Transistor, 97A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1697-C3M0025065K-ND
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DigiKey | GEN 3 650V 25 M SIC MOSFET Min Qty: 1 Lead time: 34 Weeks Container: Tube | Temporarily Out of Stock |
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$24.0582 / $30.9500 | Buy Now |
DISTI #
941-C3M0025065K
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Mouser Electronics | MOSFET 650V MOSFET 25mOHMS SiC MOSFET RoHS: Compliant | 852 |
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$24.5400 / $31.5700 | Buy Now |
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C3M0025065K
Wolfspeed
Buy Now
Datasheet
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C3M0025065K
Wolfspeed
Power Field-Effect Transistor, 97A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 97 A | |
Drain-source On Resistance-Max | 0.034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12 pF | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 326 W | |
Pulsed Drain Current-Max (IDM) | 251 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |