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Power Field-Effect Transistor, 97A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1697-C3M0025065D-ND
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DigiKey | GEN 3 650V 25 M SIC MOSFET Min Qty: 1 Lead time: 34 Weeks Container: Tube |
1548 In Stock |
|
$24.1549 / $31.0800 | Buy Now |
DISTI #
941-C3M0025065D
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Mouser Electronics | MOSFET 650V MOSFET 25mOHMS SiC MOSFET RoHS: Compliant | 1746 |
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$22.0000 / $27.4300 | Buy Now |
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C3M0025065D
Wolfspeed
Buy Now
Datasheet
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C3M0025065D
Wolfspeed
Power Field-Effect Transistor, 97A I(D), 650V, 0.034ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 97 A | |
Drain-source On Resistance-Max | 0.034 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 12 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 326 W | |
Pulsed Drain Current-Max (IDM) | 251 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for C3M0025065D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C3M0025065D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT94N65B2C3G | Power Field-Effect Transistor, 94A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 | Microsemi Corporation | C3M0025065D vs APT94N65B2C3G |
APT94N65B2C6 | Power Field-Effect Transistor, 95A I(D), 650V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | C3M0025065D vs APT94N65B2C6 |
APT94N65LC6 | Power Field-Effect Transistor | Microsemi Corporation | C3M0025065D vs APT94N65LC6 |
APT94N60L2C3G | Power Field-Effect Transistor, 94A I(D), 600V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264MAX, 3 PIN | Microsemi Corporation | C3M0025065D vs APT94N60L2C3G |
APT97N65LC6 | Power Field-Effect Transistor, 97A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | C3M0025065D vs APT97N65LC6 |