Datasheets
C3-28 by:

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

Part Details for C3-28 by Advanced Semiconductor Inc

Overview of C3-28 by Advanced Semiconductor Inc

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Part Details for C3-28

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C3-28 Part Data Attributes:

C3-28 Advanced Semiconductor Inc
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C3-28 Advanced Semiconductor Inc RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 7 pF
Configuration SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 10 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 600 MHz

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