There are no models available for this part yet.
Overview of BZW06P376 by EIC Semiconductor Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
CAD Models for BZW06P376 by EIC Semiconductor Inc
Part Data Attributes for BZW06P376 by EIC Semiconductor Inc
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Pbfree Code
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Yes
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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EIC SEMICONDUCTOR CO LTD
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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HTS Code
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8541.10.00.50
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Additional Feature
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EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
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Breakdown Voltage-Max
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484 V
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Breakdown Voltage-Min
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418 V
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Breakdown Voltage-Nom
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451 V
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Case Connection
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ISOLATED
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Clamping Voltage-Max
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603 V
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Configuration
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SINGLE
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Diode Element Material
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SILICON
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Diode Type
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TRANS VOLTAGE SUPPRESSOR DIODE
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JEDEC-95 Code
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DO-15
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JESD-30 Code
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O-PALF-W2
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JESD-609 Code
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e3
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Non-rep Peak Rev Power Dis-Max
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600 W
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Number of Elements
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1
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Number of Terminals
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2
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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ROUND
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Package Style
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LONG FORM
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Polarity
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UNIDIRECTIONAL
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Power Dissipation-Max
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5 W
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Reference Standard
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MIL-STD-202; TS-16949
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Rep Pk Reverse Voltage-Max
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376 V
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Reverse Current-Max
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1 µA
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Reverse Test Voltage
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376 V
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Surface Mount
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NO
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Technology
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AVALANCHE
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Terminal Finish
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Tin (Sn)
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Terminal Form
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WIRE
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Terminal Position
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AXIAL
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