Part Details for BZV55-B39 by Galaxy Microelectronics
Overview of BZV55-B39 by Galaxy Microelectronics
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Part Details for BZV55-B39
BZV55-B39 CAD Models
BZV55-B39 Part Data Attributes
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BZV55-B39
Galaxy Microelectronics
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Datasheet
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BZV55-B39
Galaxy Microelectronics
Zener Diode,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | ZENER DIODE | |
| Dynamic Impedance-Max | 130 Ω | |
| JESD-30 Code | O-LELF-R2 | |
| Knee Impedance-Max | 350 Ω | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Polarity | UNIDIRECTIONAL | |
| Power Dissipation-Max | 0.5 W | |
| Reference Standard | MIL-STD-202 | |
| Reference Voltage-Nom | 39 V | |
| Reverse Current-Max | 0.05 µA | |
| Reverse Test Voltage | 28 V | |
| Surface Mount | YES | |
| Technology | ZENER | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END | |
| Voltage Temp Coeff-Max | 41.2 mV/°C | |
| Voltage Tol-Max | 2% | |
| Working Test Current | 5 mA |