Part Details for BZT55C8V2-GS18 by Telefunken Microelectronics Gmbh
Overview of BZT55C8V2-GS18 by Telefunken Microelectronics Gmbh
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- Part Data Attributes: (Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
NP82N06MLG-S18-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive | |
NP82N04MLG-S18-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive, MP-25K, /Tube | |
NP70N04MUG-S18-AY | Renesas Electronics Corporation | Power MOSFETs for Automotive, MP-25K, /Tube |
Part Details for BZT55C8V2-GS18
BZT55C8V2-GS18 CAD Models
BZT55C8V2-GS18 Part Data Attributes
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BZT55C8V2-GS18
Telefunken Microelectronics Gmbh
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Datasheet
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BZT55C8V2-GS18
Telefunken Microelectronics Gmbh
Zener Diode, 8.2V V(Z), 6.1%, 0.5W,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | TELEFUNKEN MICROELECTRONICS GMBH | |
Package Description | SOD-80, QUADROMELF-2 | |
Reach Compliance Code | unknown | |
Additional Feature | LOW NOISE | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | ZENER DIODE | |
Dynamic Impedance-Max | 7 Ω | |
JESD-30 Code | O-LELF-R2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 0.5 W | |
Reference Voltage-Nom | 8.2 V | |
Surface Mount | YES | |
Technology | ZENER | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WRAP AROUND | |
Terminal Position | END | |
Voltage Tol-Max | 6.1% | |
Working Test Current | 5 mA |