Part Details for BZT52C62S by Galaxy Microelectronics
Overview of BZT52C62S by Galaxy Microelectronics
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for BZT52C62S
BZT52C62S CAD Models
BZT52C62S Part Data Attributes
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BZT52C62S
Galaxy Microelectronics
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Datasheet
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BZT52C62S
Galaxy Microelectronics
Zener Diode,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Package Description | SOD-323, 2 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | ZENER DIODE | |
Dynamic Impedance-Max | 215 Ω | |
JESD-30 Code | R-PDSO-G2 | |
Knee Impedance-Max | 423 Ω | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 0.2 W | |
Reference Voltage-Nom | 62 V | |
Reverse Current-Max | 0.045 µA | |
Reverse Test Voltage | 43.4 V | |
Surface Mount | YES | |
Technology | ZENER | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Voltage Temp Coeff-Max | 12 mV/°C | |
Voltage Tol-Max | 5% | |
Working Test Current | 2 mA |