Part Details for BYG10MHE3_A/I by Vishay Intertechnologies
Overview of BYG10MHE3_A/I by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for BYG10MHE3_A/I
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
55AC1433
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Newark | 1.5A,1000V, std, avalanche, smd |Vishay BYG10MHE3_A/I RoHS: Not Compliant Min Qty: 7500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1140 / $0.1750 | Buy Now |
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DISTI #
BYG10MHE3_A/I
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Avnet Americas | 1.5A,1000V,STD,AVALANCHE,SMD - Tape and Reel (Alt: BYG10MHE3_A/I) RoHS: Compliant Min Qty: 7500 Package Multiple: 7500 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
78-BYG10MHE3_A/I
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Mouser Electronics | Rectifiers 1.5A,1000V,STD,AVAL AEC-Q101 Qualified | 0 |
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$0.1260 | Order Now |
Part Details for BYG10MHE3_A/I
BYG10MHE3_A/I CAD Models
BYG10MHE3_A/I Part Data Attributes
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BYG10MHE3_A/I
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
BYG10MHE3_A/I
Vishay Intertechnologies
Rectifier Diode,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMA, 2 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | |
| Application | GENERAL PURPOSE | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.15 V | |
| JEDEC-95 Code | DO-214AC | |
| JESD-30 Code | R-PDSO-C2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Non-rep Pk Forward Current-Max | 30 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 1.5 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reference Standard | AEC-Q101 | |
| Rep Pk Reverse Voltage-Max | 1000 V | |
| Reverse Current-Max | 1 µA | |
| Reverse Recovery Time-Max | 4 µs | |
| Surface Mount | YES | |
| Technology | AVALANCHE | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for BYG10MHE3_A/I
This table gives cross-reference parts and alternative options found for BYG10MHE3_A/I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BYG10MHE3_A/I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BYG10M-E3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10M-E3 |
| BYG10MHE3/TR | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10MHE3/TR |
| BYG10MHM3_A/I | Rectifier Diode, | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10MHM3_A/I |
| BYG10M-E3 | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Diode | Vishay Semiconductors | BYG10MHE3_A/I vs BYG10M-E3 |
| BYG10M-M3/TR3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10M-M3/TR3 |
| BYG10MHE3_A/H | Rectifier Diode, | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10MHE3_A/H |
| BYG10M-TR | Rectifier Diode, 1 Element, 1.5A, 1000V V(RRM), | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10M-TR |
| BYG10M-E3/TR3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | Vishay Intertechnologies | BYG10MHE3_A/I vs BYG10M-E3/TR3 |
| BYG10M-E3/TR3 | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode | Vishay Semiconductors | BYG10MHE3_A/I vs BYG10M-E3/TR3 |
| BYG10M-M3/TR | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode | Vishay Semiconductors | BYG10MHE3_A/I vs BYG10M-M3/TR |