Datasheets
BUZ76A by:

2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for BUZ76A by Rochester Electronics LLC

Overview of BUZ76A by Rochester Electronics LLC

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Part Details for BUZ76A

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BUZ76A Part Data Attributes

BUZ76A Rochester Electronics LLC
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BUZ76A Rochester Electronics LLC 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUZ76A

This table gives cross-reference parts and alternative options found for BUZ76A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ76A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics BUZ76A vs BUZ76A
BUZ76A TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB Intersil Corporation BUZ76A vs BUZ76A
Part Number Description Manufacturer Compare
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUZ76A vs BUZ76A
BUZ76A TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB Intersil Corporation BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG BUZ76A vs BUZ76A

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