Part Details for BUZ76A by Infineon Technologies AG
Overview of BUZ76A by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ76A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 50 |
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RFQ | ||
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Quest Components | 2.6 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 40 |
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$5.0000 / $7.5000 | Buy Now |
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Rochester Electronics | BUZ76A - 400V, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 10600 |
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$0.4958 / $0.5833 | Buy Now |
Part Details for BUZ76A
BUZ76A CAD Models
BUZ76A Part Data Attributes
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BUZ76A
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BUZ76A
Infineon Technologies AG
Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SFM | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ76A
This table gives cross-reference parts and alternative options found for BUZ76A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ76A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUZ76A | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | BUZ76A vs BUZ76A |
BUZ76A | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | BUZ76A vs BUZ76A |
BUZ76A | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | BUZ76A vs BUZ76A |
BUZ76A | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB | Intersil Corporation | BUZ76A vs BUZ76A |