Datasheets
BUZ76A by:

Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for BUZ76A by Infineon Technologies AG

Overview of BUZ76A by Infineon Technologies AG

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Price & Stock for BUZ76A

Part # Distributor Description Stock Price Buy
Bristol Electronics   50
RFQ
Quest Components 2.6 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 40
  • 1 $7.5000
  • 5 $5.5000
  • 15 $5.0000
$5.0000 / $7.5000 Buy Now
Rochester Electronics BUZ76A - 400V, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 10600
  • 1 $0.5833
  • 25 $0.5716
  • 100 $0.5483
  • 500 $0.5250
  • 1,000 $0.4958
$0.4958 / $0.5833 Buy Now

Part Details for BUZ76A

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BUZ76A Part Data Attributes

BUZ76A Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BUZ76A Infineon Technologies AG Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SFM
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 180 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 2.6 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 11 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUZ76A

This table gives cross-reference parts and alternative options found for BUZ76A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ76A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ76A vs BUZ76A
BUZ76A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Thomson Consumer Electronics BUZ76A vs BUZ76A
BUZ76A TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB Intersil Corporation BUZ76A vs BUZ76A
Part Number Description Manufacturer Compare
BUZ76A Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens BUZ76A vs BUZ76A
BUZ76A TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2.6A I(D),TO-220AB Intersil Corporation BUZ76A vs BUZ76A
BUZ76A 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ76A vs BUZ76A

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