Part Details for BUZ71A by STMicroelectronics
Results Overview of BUZ71A by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
BUZ71A Information
BUZ71A by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ71A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,12A I(D),TO-220AB | 48 |
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$5.5500 / $9.0000 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,12A I(D),TO-220AB | 1 |
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$6.0000 / $9.0000 | Buy Now |
Part Details for BUZ71A
BUZ71A CAD Models
BUZ71A Part Data Attributes
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BUZ71A
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
BUZ71A
STMicroelectronics
13A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 150 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 70 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 145 ns | |
| Turn-on Time-Max (ton) | 165 ns |
Alternate Parts for BUZ71A
This table gives cross-reference parts and alternative options found for BUZ71A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ71A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ70 | Siemens | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ71A vs BUZ70 |
| MTP10N05 | Motorola Mobility LLC | Check for Price | 10A, 50V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | BUZ71A vs MTP10N05 |
| RFP3055LE | Intersil Corporation | Check for Price | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | BUZ71A vs RFP3055LE |
| BUZ71A | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ71A vs BUZ71A |
| BUZ71A | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ71A vs BUZ71A |
| MTP3055EL | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ71A vs MTP3055EL |
| BUZ71A | Siemens | Check for Price | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ71A vs BUZ71A |
| RFP3055LE | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | BUZ71A vs RFP3055LE |
| MTP15N06E | Texas Instruments | Check for Price | 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | BUZ71A vs MTP15N06E |
| MTP3055E | STMicroelectronics | Check for Price | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | BUZ71A vs MTP3055E |
BUZ71A Frequently Asked Questions (FAQ)
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The BUZ71A can operate from -55°C to 150°C, making it suitable for high-reliability applications.
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To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and add a capacitor (e.g., 100 nF) between the gate and source to filter out noise.
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The recommended gate drive voltage for the BUZ71A is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
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Use a voltage clamp or a zener diode to protect the BUZ71A from overvoltage, and consider adding a current sense resistor and a fuse to prevent overcurrent.
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Yes, the BUZ71A can be used in switching applications, but ensure that the switching frequency is within the recommended range (up to 100 kHz) and that the device is properly biased and protected.