Part Details for BUZ346 by Siemens
Results Overview of BUZ346 by Siemens
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ346 Information
BUZ346 by Siemens is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ346
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 6 |
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$5.8240 / $8.9600 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,60A I(D),TO-218 | 16 |
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$2.2968 / $3.1320 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,60A I(D),TO-218 | 4 |
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$6.0000 / $12.0000 | Buy Now |
Part Details for BUZ346
BUZ346 CAD Models
BUZ346 Part Data Attributes
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BUZ346
Siemens
Buy Now
Datasheet
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Compare Parts:
BUZ346
Siemens
Power Field-Effect Transistor, 58A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SIEMENS A G | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 72 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 750 pF | |
| JEDEC-95 Code | TO-218AA | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 232 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 890 ns | |
| Turn-on Time-Max (ton) | 290 ns |
Alternate Parts for BUZ346
This table gives cross-reference parts and alternative options found for BUZ346. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ346, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STW80NE06-10 | STMicroelectronics | Check for Price | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | BUZ346 vs STW80NE06-10 |
| HUF75345G3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | BUZ346 vs HUF75345G3 |
| IRFP054PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | BUZ346 vs IRFP054PBF |
| HUF75345G3_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | BUZ346 vs HUF75345G3_NL |
| HUF75339G3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | BUZ346 vs HUF75339G3 |
| IRFP054N | International Rectifier | Check for Price | Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | BUZ346 vs IRFP054N |
| HUF75333G3 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 56A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | BUZ346 vs HUF75333G3 |
| IRFP064PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | BUZ346 vs IRFP064PBF |
| HUF75337G3 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | BUZ346 vs HUF75337G3 |
| HUF75345G3 | Rochester Electronics LLC | Check for Price | 75A, 55V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | BUZ346 vs HUF75345G3 |