There are no models available for this part yet.
Overview of BUZ342 by Siemens
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
CAD Models for BUZ342 by Siemens
Part Data Attributes for BUZ342 by Siemens
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|---|---|
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Part Life Cycle Code
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Transferred
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Ihs Manufacturer
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SIEMENS A G
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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HTS Code
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8541.29.00.95
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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460 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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50 V
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Drain Current-Max (ID)
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60 A
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Drain-source On Resistance-Max
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0.01 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
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1000 pF
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JEDEC-95 Code
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TO-218
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation Ambient-Max
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400 W
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Pulsed Drain Current-Max (IDM)
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240 A
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Qualification Status
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Not Qualified
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Surface Mount
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NO
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
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590 ns
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Turn-on Time-Max (ton)
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460 ns
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Alternate Parts for BUZ342
This table gives cross-reference parts and alternative options found for BUZ342. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ342, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP054PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | BUZ342 vs IRFP054PBF |
| HUF75344G3_NL | 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | Rochester Electronics LLC | BUZ342 vs HUF75344G3_NL |
| HUF75333G3 | 56A, 55V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | BUZ342 vs HUF75333G3 |
| IRFP054PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | BUZ342 vs IRFP054PBF |
| BUZ346 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | BUZ342 vs BUZ346 |
| IRFP064PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | BUZ342 vs IRFP064PBF |
| IRFP064PBF | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | BUZ342 vs IRFP064PBF |
| IRFP054 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ342 vs IRFP054 |
| IRFP064 | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Vishay Siliconix | BUZ342 vs IRFP064 |
| IRFP064 | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ342 vs IRFP064 |