Part Details for BUZ32H3045A by Rochester Electronics LLC
Overview of BUZ32H3045A by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUZ32H3045A
BUZ32H3045A CAD Models
BUZ32H3045A Part Data Attributes
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BUZ32H3045A
Rochester Electronics LLC
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Datasheet
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BUZ32H3045A
Rochester Electronics LLC
9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AA, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9.5 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 38 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ32H3045A
This table gives cross-reference parts and alternative options found for BUZ32H3045A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ32H3045A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC22DN20NS3GATMA1 | Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BUZ32H3045A vs BSC22DN20NS3GATMA1 |
| BUZ73AHXKSA1 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045A vs BUZ73AHXKSA1 |
| BUZ31H3046XKSA1 | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | BUZ32H3045A vs BUZ31H3046XKSA1 |
| MTP8N15L | Power Field-Effect Transistor, 8A I(D), 150V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUZ32H3045A vs MTP8N15L |
| BSZ42DN25NS3G | Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BUZ32H3045A vs BSZ42DN25NS3G |
| MTP8N15L | 8A, 150V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | BUZ32H3045A vs MTP8N15L |
| BUZ73H | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045A vs BUZ73H |
| BUZ31HXKSA1 | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | BUZ32H3045A vs BUZ31HXKSA1 |
| BSZ42DN25NS3GATMA1 | Power Field-Effect Transistor, 5A I(D), 250V, 0.425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BUZ32H3045A vs BSZ42DN25NS3GATMA1 |
| BUZ73L | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | BUZ32H3045A vs BUZ73L |