Datasheets
BUZ24 by:

Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN

Part Details for BUZ24 by Infineon Technologies AG

Overview of BUZ24 by Infineon Technologies AG

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Part Details for BUZ24

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BUZ24 Part Data Attributes

BUZ24 Infineon Technologies AG
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BUZ24 Infineon Technologies AG Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-204AE, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 128 A
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for BUZ24

This table gives cross-reference parts and alternative options found for BUZ24. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ24, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ24 Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors BUZ24 vs BUZ24
Part Number Description Manufacturer Compare
IRF152 Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier BUZ24 vs IRF152
IRF150-JQR-BR1 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ24 vs IRF150-JQR-BR1
UFN153 Power Field-Effect Transistor, 33A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) BUZ24 vs UFN153
IRF153 33A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation BUZ24 vs IRF153
IRF034 25A, 60V, 0.058ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC BUZ24 vs IRF034
IRF152R 33A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation BUZ24 vs IRF152R
2N6764 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ24 vs 2N6764
JANTX2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor BUZ24 vs JANTX2N6764
IRF150-JQR-B 38A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ24 vs IRF150-JQR-B
2N6764 Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Advanced Semiconductor Inc BUZ24 vs 2N6764

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