Datasheets
BUZ12AL by:
Siemens
Infineon Technologies AG
Siemens
Not Found

Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for BUZ12AL by Siemens

Results Overview of BUZ12AL by Siemens

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

BUZ12AL Information

BUZ12AL by Siemens is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BUZ12AL

BUZ12AL CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

BUZ12AL Part Data Attributes

BUZ12AL Siemens
Buy Now Datasheet
Compare Parts:
BUZ12AL Siemens Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 41 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 450 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 168 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 300 ns