Datasheets
BUZ11A by:
STMicroelectronics
Advanced Microelectronic Products Inc
Freescale Semiconductor
Infineon Technologies AG
Motorola Mobility LLC
Motorola Semiconductor Products
National Semiconductor Corporation
New Jersey Semiconductor Products Inc
North American Philips Discrete Products Div
Siemens
STMicroelectronics
Texas Instruments
TT Electronics Power and Hybrid / Semelab Limited
TT Electronics Resistors
Vishay Siliconix
Not Found

26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for BUZ11A by STMicroelectronics

Results Overview of BUZ11A by STMicroelectronics

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

BUZ11A Information

BUZ11A by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BUZ11A

Part # Distributor Description Stock Price Buy
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB 15033
  • 1 $1.7825
  • 674 $0.8200
  • 1,221 $0.7487
$0.7487 / $1.7825 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB 1044
  • 1 $2.7776
  • 468 $1.1458
  • 874 $1.0416
$1.0416 / $2.7776 Buy Now
Quest Components TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,25A I(D),TO-220AB 128
  • 1 $6.0000
  • 18 $4.0000
  • 64 $3.7000
$3.7000 / $6.0000 Buy Now

Part Details for BUZ11A

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BUZ11A Part Data Attributes

BUZ11A STMicroelectronics
Buy Now Datasheet
Compare Parts:
BUZ11A STMicroelectronics 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 120 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 95 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 104 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 450 ns
Turn-on Time-Max (ton) 175 ns

Alternate Parts for BUZ11A

This table gives cross-reference parts and alternative options found for BUZ11A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BUZ11A Motorola Mobility LLC Check for Price 25A, 50V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB BUZ11A vs BUZ11A
BUZ10 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BUZ11A vs BUZ10
IRFZ30 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN BUZ11A vs IRFZ30
RFP25N06 Rochester Electronics LLC Check for Price 25A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB BUZ11A vs RFP25N06
BUZ11A Vishay Siliconix Check for Price Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, BUZ11A vs BUZ11A
IRFZ30 Motorola Mobility LLC Check for Price 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB BUZ11A vs IRFZ30
BUZ10 TT Electronics Power and Hybrid / Semelab Limited Check for Price 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET BUZ11A vs BUZ10
BUZ11A New Jersey Semiconductor Products Inc Check for Price Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB BUZ11A vs BUZ11A
BUZ11A Infineon Technologies AG Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, BUZ11A vs BUZ11A
BUZ11A TT Electronics Resistors Check for Price Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BUZ11A vs BUZ11A
Part Number Manufacturer Composite Price Description Compare
MTD2N40E-T4 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BUZ11A vs MTD2N40E-T4
BUZ71L Siemens Check for Price Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB BUZ11A vs BUZ71L
HUF75329D3S_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, BUZ11A vs HUF75329D3S_NL
HUF75309D3ST Intersil Corporation Check for Price 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA BUZ11A vs HUF75309D3ST
PHD20N06T,118 Nexperia Check for Price PHD20N06T - N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin BUZ11A vs PHD20N06T,118
BUK7277-55A,118 Nexperia Check for Price N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin BUZ11A vs BUK7277-55A,118
HUFA76409D3 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, BUZ11A vs HUFA76409D3
BUZ10 STMicroelectronics Check for Price 23A, 50V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN BUZ11A vs BUZ10
MTD15N06VL-1 onsemi Check for Price 15A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 BUZ11A vs MTD15N06VL-1
MTP15N06V onsemi Check for Price 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN BUZ11A vs MTP15N06V

BUZ11A Related Parts

BUZ11A Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) of the BUZ11A is not explicitly stated in the datasheet. However, STMicroelectronics provides a Safe Operating Area (SOA) curve in the application note AN457, which can be used to determine the maximum safe operating area for a given application.

  • The thermal resistance of the BUZ11A can be calculated using the thermal resistance values provided in the datasheet (RthJC and RthJA) and the application-specific thermal interface material and layout. A thermal simulation tool or a thermal resistance calculator can be used to estimate the thermal resistance.

  • STMicroelectronics provides a recommended PCB layout and thermal management guidelines in the application note AN457. The guidelines include recommendations for copper thickness, thermal vias, and heat sink design to ensure optimal thermal performance.

  • Yes, the BUZ11A is qualified for automotive and high-reliability applications. It meets the requirements of the AEC-Q101 standard and is suitable for use in harsh environments. However, additional testing and validation may be required to ensure compliance with specific industry standards.

  • The BUZ11A requires a specific biasing and configuration to ensure optimal performance. STMicroelectronics provides a recommended biasing and configuration scheme in the datasheet and application notes. Additionally, a spice model is available to simulate the device behavior and optimize the design.