Datasheets
BUZ111S by:

80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for BUZ111S by Rochester Electronics LLC

Overview of BUZ111S by Rochester Electronics LLC

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Part Details for BUZ111S

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BUZ111S Part Data Attributes

BUZ111S Rochester Electronics LLC
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BUZ111S Rochester Electronics LLC 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-220AB
Package Description PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code unknown
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 700 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BUZ111S

This table gives cross-reference parts and alternative options found for BUZ111S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ111S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ111S Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ111S vs BUZ111S
Part Number Description Manufacturer Compare
BUZ111S Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ111S vs BUZ111S
BUZ111S Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ111S vs BUZ111S

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