Part Details for BUZ111S by Infineon Technologies AG
Overview of BUZ111S by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ111S
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BUZ111S-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 353 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2202 In Stock |
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$0.8500 | Buy Now |
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Bristol Electronics | 8720 |
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RFQ | ||
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Quest Components | 6976 |
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$2.3550 / $4.7100 | Buy Now | |
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Rochester Electronics | BUZ111 - Power Field-Effect Transistor, 80A, 55V, 0.008ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2867 |
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$0.7313 / $0.8604 | Buy Now |
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Chip 1 Exchange | INSTOCK | 358 |
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RFQ |
Part Details for BUZ111S
BUZ111S CAD Models
BUZ111S Part Data Attributes:
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BUZ111S
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BUZ111S
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 700 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ111S
This table gives cross-reference parts and alternative options found for BUZ111S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ111S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ111S | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220, 3 PIN | Rochester Electronics LLC | BUZ111S vs BUZ111S |
BUZ111S | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | BUZ111S vs BUZ111S |