Datasheets
BUZ104 by:

Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for BUZ104 by Siemens

Overview of BUZ104 by Siemens

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Price & Stock for BUZ104

Part # Distributor Description Stock Price Buy
Bristol Electronics   80
RFQ

Part Details for BUZ104

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BUZ104 Part Data Attributes:

BUZ104 Siemens
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BUZ104 Siemens Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 35 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 17.5 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 90 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Pulsed Drain Current-Max (IDM) 70 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 60 ns

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