Datasheets
BUZ102SL-4 by:

Power Field-Effect Transistor, 6.2A I(D), 55V, 0.033ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28

Part Details for BUZ102SL-4 by Siemens

Overview of BUZ102SL-4 by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BUZ102SL-4

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BUZ102SL-4 Part Data Attributes

BUZ102SL-4 Siemens
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BUZ102SL-4 Siemens Power Field-Effect Transistor, 6.2A I(D), 55V, 0.033ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G28
Pin Count 28
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 245 mJ
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 6.2 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G28
Number of Elements 4
Number of Terminals 28
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 24.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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