Datasheets
BUZ102S by:

Power Field-Effect Transistor, 52A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for BUZ102S by Siemens

Overview of BUZ102S by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BUZ102S

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 61
  • 1 $11.5000
  • 5 $8.6250
  • 30 $7.4750
$7.4750 / $11.5000 Buy Now
Chip1Cloud SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) 9100
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 382
Buy Now

Part Details for BUZ102S

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BUZ102S Part Data Attributes:

BUZ102S Siemens
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BUZ102S Siemens Power Field-Effect Transistor, 52A I(D), 55V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SFM
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ102S

This table gives cross-reference parts and alternative options found for BUZ102S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ102S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ102S Power Field-Effect Transistor, 52A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ102S vs BUZ102S
Part Number Description Manufacturer Compare
BUZ102S Power Field-Effect Transistor, 52A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ102S vs BUZ102S

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