Datasheets
BUP602D by:

Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-218

Part Details for BUP602D by Siemens

Overview of BUP602D by Siemens

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for BUP602D

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BUP602D Part Data Attributes

BUP602D Siemens
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BUP602D Siemens Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-218
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Collector Current-Max (IC) 36 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 680 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified
Rise Time-Max (tr) 110 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 330 ns
Turn-off Time-Nom (toff) 250 ns
Turn-on Time-Max (ton) 60 ns
Turn-on Time-Nom (ton) 40 ns
VCEsat-Max 2.7 V

Alternate Parts for BUP602D

This table gives cross-reference parts and alternative options found for BUP602D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP602D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUP602D Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-218AB Infineon Technologies AG BUP602D vs BUP602D
Part Number Description Manufacturer Compare
HGT1S5N120BNS9A 21A, 1200V, N-CHANNEL IGBT, TO-263AB Intersil Corporation BUP602D vs HGT1S5N120BNS9A
HGTP3N60C3DR 6A, 600V, N-CHANNEL IGBT, TO-220AB, PLASTIC PACKAGE-3 Intersil Corporation BUP602D vs HGTP3N60C3DR
IRG4BC20FD-STRRPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier BUP602D vs IRG4BC20FD-STRRPBF
HGT1S12N60C3S9A 24A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation BUP602D vs HGT1S12N60C3S9A
IRG4PH40KDPBF Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier BUP602D vs IRG4PH40KDPBF
IRG4PH50UPBF Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN International Rectifier BUP602D vs IRG4PH50UPBF
HGTP3N60A4D 600V, SMPS IGBT, TO-220 3L, 6400-RAIL onsemi BUP602D vs HGTP3N60A4D
HGT5A40N60A4D 75A, 600V, N-CHANNEL IGBT, PLASTIC, TO-247, 3 PIN Intersil Corporation BUP602D vs HGT5A40N60A4D
HGTG11N120CND 11A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation BUP602D vs HGTG11N120CND
HGTP7N60A4 IGBT, 600V, SMPS, TO-220-3, 800-TUBE onsemi BUP602D vs HGTP7N60A4

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