Part Details for BUP314S by Infineon Technologies AG
Overview of BUP314S by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUP314S
BUP314S CAD Models
BUP314S Part Data Attributes
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BUP314S
Infineon Technologies AG
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Datasheet
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BUP314S
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, TO-218AB
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 25 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE | |
Fall Time-Max (tf) | 95 ns | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-218AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 90 ns | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 490 ns | |
Turn-on Time-Nom (ton) | 125 ns |
Alternate Parts for BUP314S
This table gives cross-reference parts and alternative options found for BUP314S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP314S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT35GN120SG | Insulated Gate Bipolar Transistor, 94A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BUP314S vs APT35GN120SG |
IRGBC40U | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | BUP314S vs IRGBC40U |
IXGH22N50B | Insulated Gate Bipolar Transistor, 44A I(C), 500V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | BUP314S vs IXGH22N50B |
HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | BUP314S vs HGTP12N60D1 |
HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | BUP314S vs HGTG30N60C3 |
HGTP12N60A4 | Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB ALTERNATE VERSION, 3 PIN | Fairchild Semiconductor Corporation | BUP314S vs HGTP12N60A4 |
IRG4IBC10UDPBF | Insulated Gate Bipolar Transistor, 6.8A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL PACK-3 | Infineon Technologies AG | BUP314S vs IRG4IBC10UDPBF |
IXGH17N100 | Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | BUP314S vs IXGH17N100 |
APT30GT60BRD | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN | Advanced Power Technology | BUP314S vs APT30GT60BRD |
IRG4BC30SPBF | Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | BUP314S vs IRG4BC30SPBF |