We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In
Transistors / IGBTs / BUP314D
Datasheets
BUP314D by:
Infineon Technologies AG
Infineon Technologies AG
Rochester Electronics LLC
Siemens
Not Found

Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218

Part Details for BUP314D by Infineon Technologies AG

Results Overview of BUP314D by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

BUP314D Information

BUP314D by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BUP314D

Part # Distributor Description Stock Price Buy
ComSIT USA DUO PACK IGBT TO-218 Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218 RoHS: Not Compliant ECCN: EAR99 Stock DE - 25
Stock ES - 53
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BUP314D

BUP314D CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

BUP314D Part Data Attributes

Parametric Data
BUP314D Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BUP314D Infineon Technologies AG Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218
Select a part to compare:
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH SPEED
Collector Current-Max (IC) 42 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 60 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 100 ns
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 420 ns
Turn-on Time-Nom (ton) 75 ns

Alternate Parts for BUP314D

This table gives cross-reference parts and alternative options found for BUP314D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP314D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BUP314D Siemens Check for Price Insulated Gate Bipolar Transistor, 42A I(C), 1200V V(BR)CES, N-Channel, TO-218 BUP314D vs BUP314D
Part Number Manufacturer Composite Price Description Compare
IRGBC30FD2 International Rectifier Check for Price Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN BUP314D vs IRGBC30FD2
GT15H101 Toshiba America Electronic Components Check for Price TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor BUP314D vs GT15H101
HGT1S3N60B3DS Fairchild Semiconductor Corporation Check for Price Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, BUP314D vs HGT1S3N60B3DS
IRG4PC30KD Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN BUP314D vs IRG4PC30KD
IRG4PC50U Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN BUP314D vs IRG4PC50U
IXSH35N100A IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 70A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN BUP314D vs IXSH35N100A
GT20J311 Toshiba America Electronic Components Check for Price TRANSISTOR 20 A, 600 V, N-CHANNEL IGBT, 2-16H1A, 3 PIN, Insulated Gate BIP Transistor BUP314D vs GT20J311
IXSH15N120B IXYS Corporation Check for Price Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN BUP314D vs IXSH15N120B
IRG4PC30WPBF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-247AC, 3 PIN BUP314D vs IRG4PC30WPBF
IRG4PC40S Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN BUP314D vs IRG4PC40S

BUP314D Related Parts

BUP314D Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.

  • Implement a proper thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.

  • Exceeding the maximum Tj rating can lead to reduced lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure the system design keeps the junction temperature within the recommended range.

  • Implement proper ESD protection measures, such as using ESD-sensitive handling procedures, ESD-protected workstations, and incorporating ESD protection devices in the circuit design.

  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60-90 seconds, and a maximum of 3 reflow cycles. For rework, use a low-temperature soldering iron and a thermal protection device to prevent overheating.