Part Details for BUP313D by Infineon Technologies AG
Overview of BUP313D by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUP313D
BUP313D CAD Models
BUP313D Part Data Attributes
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BUP313D
Infineon Technologies AG
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Datasheet
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BUP313D
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-218
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH SPEED | |
Collector Current-Max (IC) | 32 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 95 ns | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 70 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 400 ns | |
Turn-on Time-Nom (ton) | 70 ns |
Alternate Parts for BUP313D
This table gives cross-reference parts and alternative options found for BUP313D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP313D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1MB20D-060 | Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | BUP313D vs 1MB20D-060 |
SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | BUP313D vs SGP13N60UF |
HGTG30N60C3 | Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 | Fairchild Semiconductor Corporation | BUP313D vs HGTG30N60C3 |
HGTP12N60D1 | Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | BUP313D vs HGTP12N60D1 |
SGB15N60HS | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, D2PAK-3 | Infineon Technologies AG | BUP313D vs SGB15N60HS |
APT30GP60SG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, D3PAK, 3 PIN | Microsemi Corporation | BUP313D vs APT30GP60SG |
MGP14N60E | 18A, 600V, N-CHANNEL IGBT, TO-220AB, CASE 221A-09, 3 PIN | onsemi | BUP313D vs MGP14N60E |
IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | BUP313D vs IRG4BC20W-S |
IXDA20N120AS | Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, D2PAK-3 | IXYS Corporation | BUP313D vs IXDA20N120AS |
SGW15N120 | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | BUP313D vs SGW15N120 |