Datasheets
BUP307D by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218

Part Details for BUP307D by Siemens

Overview of BUP307D by Siemens

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for BUP307D

Part # Distributor Description Stock Price Buy
Quest Components 35 A, 1200 V, N-CHANNEL IGBT, TO-218 1361
  • 1 $16.0000
  • 218 $8.6400
  • 464 $8.0000
$8.0000 / $16.0000 Buy Now

Part Details for BUP307D

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BUP307D Part Data Attributes:

BUP307D Siemens
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BUP307D Siemens Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature HIGH SPEED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 28 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 35 ns
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 310 ns
Turn-off Time-Nom (toff) 230 ns
Turn-on Time-Max (ton) 45 ns
Turn-on Time-Nom (ton) 30 ns
VCEsat-Max 3.2 V

Alternate Parts for BUP307D

This table gives cross-reference parts and alternative options found for BUP307D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUP307D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUP307D Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218AB, TO-218AB, 3 PIN Infineon Technologies AG BUP307D vs BUP307D
Part Number Description Manufacturer Compare
BUP307D Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218AB, TO-218AB, 3 PIN Infineon Technologies AG BUP307D vs BUP307D

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