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BUP307D by:

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218AB, TO-218AB, 3 PIN

Part Details for BUP307D by Infineon Technologies AG

Overview of BUP307D by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Part Details for BUP307D

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BUP307D Part Data Attributes:

BUP307D Infineon Technologies AG
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BUP307D Infineon Technologies AG Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-218AB, TO-218AB, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-218AB, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature HIGH SPEED
Collector Current-Max (IC) 35 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 28 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-218AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Qualification Status Not Qualified
Rise Time-Max (tr) 35 ns
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 250 ns
Turn-on Time-Nom (ton) 52 ns

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