Datasheets
BUK9M19-60EX by:

BUK9M19-60E - N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33@en-us

Part Details for BUK9M19-60EX by Nexperia

Overview of BUK9M19-60EX by Nexperia

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BUK9M19-60EX

Part # Distributor Description Stock Price Buy
DISTI # 17AC9458
Newark Mosfet, N-Ch, Auto, 38A, 60V, Sot1210, Transistor Polarity:N Channel, Continuous Drain Current Id:38A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.014Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Nexperia BUK9M19-60EX Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.9050
  • 10 $0.7870
  • 25 $0.7060
  • 50 $0.6240
  • 100 $0.5430
  • 250 $0.5090
  • 500 $0.4740
$0.4740 / $0.9050 Buy Now
DISTI # 28AK6758
Newark Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210, Transistor Polarity:N Channel, Continuous Drain Current Id:38A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.014Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Nexperia BUK9M19-60EX Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $0.3190
  • 3,000 $0.3060
  • 6,000 $0.2950
  • 9,000 $0.2840
$0.2840 / $0.3190 Buy Now
DISTI # 1727-2574-1-ND
DigiKey MOSFET N-CH 60V 38A LFPAK33 Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 197
In Stock
  • 1 $0.8000
  • 10 $0.6920
  • 100 $0.4789
  • 500 $0.4002
  • 1,500 $0.3327
  • 3,000 $0.2963
  • 7,500 $0.2807
  • 10,500 $0.2600
  • 37,500 $0.2574
$0.2574 / $0.8000 Buy Now
DISTI # 771-BUK9M19-60EX
Mouser Electronics MOSFET BUK9M19-60E/SOT1210/mLFPAK RoHS: Compliant 77
  • 1 $0.8000
  • 10 $0.6920
  • 100 $0.4790
  • 500 $0.4010
  • 1,500 $0.3350
  • 3,000 $0.2870
  • 9,000 $0.2660
  • 24,000 $0.2630
$0.2630 / $0.8000 Buy Now
Future Electronics ELITE PROGRAM PART - BUK9M19-60E/SOT1210/mLFPAK RoHS: Compliant pbFree: Yes Min Qty: 4500 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel 0
Reel
  • 1,500 $0.2750
  • 3,000 $0.2700
  • 4,500 $0.2650
  • 7,500 $0.2600
  • 15,000 $0.2500
$0.2500 / $0.2750 Buy Now
DISTI # BUK9M19-60EX
TTI MOSFET BUK9M19-60E/SOT1210/mLFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 1500 Container: Reel Americas - 0
  • 3,000 $0.2840
  • 4,500 $0.2790
  • 7,500 $0.2730
  • 10,500 $0.2680
  • 15,000 $0.2630
  • 37,500 $0.2570
$0.2570 / $0.2840 Buy Now
DISTI # BUK9M19-60EX
TME Transistor: N-MOSFET, unipolar, 60V, 26.8A, Idm: 152A, 62W Min Qty: 1 0
  • 1 $1.0440
  • 5 $0.5640
  • 25 $0.4980
  • 100 $0.4480
  • 500 $0.4170
$0.4170 / $1.0440 RFQ
DISTI # BUK9M19-60EX
Avnet Asia Transistor MOSFET N-CH 60V 38A 8-Pin LFPAK-33 T/R (Alt: BUK9M19-60EX) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 3,000 $0.2941
  • 6,000 $0.2745
  • 9,000 $0.2674
  • 15,000 $0.2606
  • 30,000 $0.2542
  • 75,000 $0.2481
  • 150,000 $0.2422
$0.2422 / $0.2941 Buy Now
DISTI # BUK9M19-60EX
Avnet Silica Transistor MOSFET N-CH 60V 38A 8-Pin LFPAK-33 T/R (Alt: BUK9M19-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
CHIPMALL.COM LIMITED Package/EnclosureSOT1210 fet typeN-Channel Operating temperature175 Gate voltage Vgs1.7V Drain-source voltage Vds60V 3000
  • 500 $0.5480
  • 2,500 $0.4121
$0.4121 / $0.5480 Buy Now
DISTI # BUK9M19-60EX
EBV Elektronik Transistor MOSFET N-CH 60V 38A 8-Pin LFPAK-33 T/R (Alt: BUK9M19-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BUK9M19-60EX

BUK9M19-60EX CAD Models

BUK9M19-60EX Part Data Attributes

BUK9M19-60EX Nexperia
Buy Now Datasheet
Compare Parts:
BUK9M19-60EX Nexperia BUK9M19-60E - N-channel 60 V, 19 mΩ logic level MOSFET in LFPAK33@en-us
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Pin Count 8
Manufacturer Package Code SOT1210
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 30 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 152 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK9M19-60EX

This table gives cross-reference parts and alternative options found for BUK9M19-60EX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9M19-60EX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ46NS Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG BUK9M19-60EX vs IRFZ46NS
BUK7M19-60EX BUK7M19-60E - N-channel 60 V, 19 mΩ standard level MOSFET in LFPAK33@en-us Nexperia BUK9M19-60EX vs BUK7M19-60EX

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