Datasheets
BUK9620-100B by:

63A, 100V, 0.0223ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

Part Details for BUK9620-100B by NXP Semiconductors

Overview of BUK9620-100B by NXP Semiconductors

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Available Datasheets

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CY7C0853AV-100BBI Rochester Electronics CY7C0853 - Flex36 3.3V 256K X 36 Synchronous Dual-Port RAM, Industrial Temp
100B484S2-7Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM
100B484S4Y8 Renesas Electronics Corporation 4K X 4 ECL I/O SRAM

Part Details for BUK9620-100B

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BUK9620-100B Part Data Attributes

BUK9620-100B NXP Semiconductors
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BUK9620-100B NXP Semiconductors 63A, 100V, 0.0223ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 222 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 63 A
Drain-source On Resistance-Max 0.0223 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 253 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish PURE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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