Datasheets
BUK961R5-30E by:

TRANSISTOR 120 A, 30 V, 0.0015 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2, FET General Purpose Power

Part Details for BUK961R5-30E by NXP Semiconductors

Overview of BUK961R5-30E by NXP Semiconductors

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Applications Industrial Automation Motor control systems

Part Details for BUK961R5-30E

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BUK961R5-30E Part Data Attributes

BUK961R5-30E NXP Semiconductors
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BUK961R5-30E NXP Semiconductors TRANSISTOR 120 A, 30 V, 0.0015 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2, FET General Purpose Power
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1096 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1393 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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