Part Details for BUK9608-55,118 by NXP Semiconductors
Results Overview of BUK9608-55,118 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BUK9608-55,118 Information
BUK9608-55,118 by NXP Semiconductors is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUK9608-55,118
BUK9608-55,118 CAD Models
BUK9608-55,118 Part Data Attributes
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BUK9608-55,118
NXP Semiconductors
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Datasheet
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BUK9608-55,118
NXP Semiconductors
BUK9608-55 - N-channel TrenchMOS logic level FET D2PAK 3-Pin
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 480 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 187 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 435 ns | |
| Turn-on Time-Max (ton) | 230 ns |
Alternate Parts for BUK9608-55,118
This table gives cross-reference parts and alternative options found for BUK9608-55,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9608-55,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK9608-55A | Philips Semiconductors | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUK9608-55,118 vs BUK9608-55A |
| BUK9608-55B | NXP Semiconductors | Check for Price | TRANSISTOR 110 A, 55 V, 0.0093 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | BUK9608-55,118 vs BUK9608-55B |
| BUK9608-55A | Nexperia | Check for Price | Power Field-Effect Transistor | BUK9608-55,118 vs BUK9608-55A |
| BUK9608-55-T | NXP Semiconductors | Check for Price | TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | BUK9608-55,118 vs BUK9608-55-T |