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Transistors / Power Field-Effect Transistors / BUK7Y7R2-60EX
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BUK7Y7R2-60EX by:

BUK7Y7R2-60E - N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56@en-us SOIC 4-Pin

Part Details for BUK7Y7R2-60EX by Nexperia

Overview of BUK7Y7R2-60EX by Nexperia

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Price & Stock for BUK7Y7R2-60EX

Part # Distributor Description Stock Price Buy
DISTI # 28AK6729
Newark Mosfet Rohs Compliant: Yes |Nexperia BUK7Y7R2-60EX Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $0.5890
$0.5890 Buy Now
DISTI # 1727-1805-1-ND
DigiKey MOSFET N-CH 60V LFPAK56 PWR-SO8 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $1.2200
  • 1,500 $0.5372
  • 3,000 $0.5057
  • 7,500 $0.4816
  • 10,500 $0.4594
$0.4594 / $1.2200 Buy Now
DISTI # BUK7Y7R2-60EX
Avnet Americas Trans MOSFET N-CH 60V 100A 4-Pin LFPAK56 T/R - Tape and Reel (Alt: BUK7Y7R2-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.5429
  • 3,000 $0.5282
  • 6,000 $0.5135
  • 9,000 $0.4989
  • 12,000 $0.4842
  • 15,000 $0.4695
  • 150,000 $0.4548
$0.4548 / $0.5429 Buy Now
DISTI # 771-BUK7Y7R260EX
Mouser Electronics MOSFET BUK7Y7R2-60E/SOT669/LFPAK RoHS: Compliant 0
  • 1,500 $0.5370
  • 3,000 $0.4810
  • 9,000 $0.4590
$0.4590 / $0.5370 Order Now
Future Electronics ELITE PROGRAM PART - BUK7Y7R2-60E/SOT669/LFPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.5050
  • 3,000 $0.4950
  • 4,500 $0.4900
  • 6,000 $0.4850
  • 7,500 $0.4700
$0.4700 / $0.5050 Buy Now
DISTI # BUK7Y7R2-60EX
TTI MOSFET BUK7Y7R2-60E/SOT669/LFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1500 Package Multiple: 1500 Container: Reel Americas - 0
  • 1,500 $0.5290
  • 3,000 $0.5160
  • 6,000 $0.5060
  • 9,000 $0.4960
  • 12,000 $0.4870
  • 15,000 $0.4770
  • 24,000 $0.4680
$0.4680 / $0.5290 Buy Now
DISTI # BUK7Y7R2-60EX
TME Transistor: N-MOSFET, unipolar, 60V, 72A, Idm: 407A, 167W Min Qty: 1 0
  • 1 $1.0300
  • 5 $0.9300
  • 25 $0.8200
  • 100 $0.7400
  • 500 $0.6900
$0.6900 / $1.0300 RFQ
DISTI # BUK7Y7R2-60EX
Avnet Asia Trans MOSFET N-CH 60V 100A 4-Pin LFPAK56 T/R (Alt: BUK7Y7R2-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 1,500 $0.4592
  • 3,000 $0.4571
  • 4,500 $0.4551
  • 7,500 $0.4530
  • 15,000 $0.4469
$0.4469 / $0.4592 Buy Now
DISTI # BUK7Y7R2-60EX
Avnet Silica Trans MOSFET N-CH 60V 100A 4-Pin LFPAK56 T/R (Alt: BUK7Y7R2-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # BUK7Y7R2-60EX
EBV Elektronik Trans MOSFET N-CH 60V 100A 4-Pin LFPAK56 T/R (Alt: BUK7Y7R2-60EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BUK7Y7R2-60EX

BUK7Y7R2-60EX Part Data Attributes:

Parametric Data
BUK7Y7R2-60EX Nexperia
Buy Now Datasheet
Compare Parts:
BUK7Y7R2-60EX Nexperia BUK7Y7R2-60E - N-channel 60 V, 7.2 mΩ standard level MOSFET in LFPAK56@en-us SOIC 4-Pin
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SOP-8, 4 PIN
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 88.2 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 407 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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