Datasheets
BUK7Y65-100E by:

19A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK56-4

Part Details for BUK7Y65-100E by NXP Semiconductors

Overview of BUK7Y65-100E by NXP Semiconductors

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Part Details for BUK7Y65-100E

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BUK7Y65-100E Part Data Attributes

BUK7Y65-100E NXP Semiconductors
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BUK7Y65-100E NXP Semiconductors 19A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER-SO8, LFPAK56-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 25.3 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 76 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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