Datasheets
BUK7675-55A,118 by:

N-channel TrenchMOS standard level FET D2PAK 3-Pin

Part Details for BUK7675-55A,118 by NXP Semiconductors

Overview of BUK7675-55A,118 by NXP Semiconductors

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for BUK7675-55A,118

Part # Distributor Description Stock Price Buy
DISTI # 2156-BUK7675-55A,118-954-ND
DigiKey NEXPERIA BUK7675-55A - POWER FIE Min Qty: 679 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 75900
In Stock
  • 679 $0.4400
$0.4400 Buy Now
Rochester Electronics BUK7675-55A - Power Field-Effect Transistor, 20.3A, 55V, 0.075ohm, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 75900
  • 1 $0.4464
  • 25 $0.4375
  • 100 $0.4196
  • 500 $0.4018
  • 1,000 $0.3794
$0.3794 / $0.4464 Buy Now

Part Details for BUK7675-55A,118

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BUK7675-55A,118 Part Data Attributes

BUK7675-55A,118 NXP Semiconductors
Buy Now Datasheet
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BUK7675-55A,118 NXP Semiconductors N-channel TrenchMOS standard level FET D2PAK 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 30.3 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20.3 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62 W
Pulsed Drain Current-Max (IDM) 81 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK7675-55A,118

This table gives cross-reference parts and alternative options found for BUK7675-55A,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK7675-55A,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUK7675-55A Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BUK7675-55A,118 vs BUK7675-55A
BUK7675-55A,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia BUK7675-55A,118 vs BUK7675-55A,118
Part Number Description Manufacturer Compare
934056270118 TRANSISTOR 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power NXP Semiconductors BUK7675-55A,118 vs 934056270118
BUK7675-55A,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia BUK7675-55A,118 vs BUK7675-55A,118
BUK7675-55A Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BUK7675-55A,118 vs BUK7675-55A

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