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N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86097810
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Verical | Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 255 Package Multiple: 1 Date Code: 2001 | Americas - 796 |
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$1.3375 / $1.4750 | Buy Now |
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Rochester Electronics | BUK762R6-40E 100A, 40V, 0.0026ohm, N-Channel Power MOSFET, D2PAK ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 796 |
|
$1.0700 / $1.2600 | Buy Now |
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BUK762R6-40E,118
Nexperia
Buy Now
Datasheet
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BUK762R6-40E,118
Nexperia
N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 574 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 920 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |