Datasheets
BUK6607-75C by:

100A, 75V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

Part Details for BUK6607-75C by NXP Semiconductors

Overview of BUK6607-75C by NXP Semiconductors

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Part Details for BUK6607-75C

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BUK6607-75C Part Data Attributes

BUK6607-75C NXP Semiconductors
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BUK6607-75C NXP Semiconductors 100A, 75V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 191 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 423 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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